PART |
Description |
Maker |
SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter From old datasheet system
|
Infineon
|
SFH426 SFH421 Q62703-P0331 Q62702-P1055 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode,在SMT Geh锓包GaAlA红外发射 GaAlAs-IR-Lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
OPE5T87 |
High Speed GaAlAs Infrared Emitter
|
List of Unclassifed Manufacturers
|
OPE5794 |
GaAlAs Infrared Emitter
|
Optek Technology OPTEK[OPTEK Technologies] ETC
|
SFH487P-2 SFH487P-1 |
GaAlAs INFRARED EMITTER
|
http:// SIEMENS[Siemens Semiconductor Group]
|
OD-880L |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
OD-880F |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
OD-880E |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
OD880F |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
PDI-E808-A |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
OD100 |
SUPER HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|